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Same model may have multiple batches, images only for reference.
RJK5031DPD-00#J2 Real Image
Same model may have multiple batches, images only for reference.

RJK5031DPD-00#J2

Part No RJK5031DPD-00#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3A MP3A
Datasheet
RJK5031DPD-00#J2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40.3W (Tc)
Maximum Rds On at Id,Vgs 3.2 Ohm @ 1.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MP-3A
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1092310-RJK5031DPD-00#J2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK5031DPD-00#J2 CAD Model

Description

The RJK5031DPD-00#J2 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Manufacturer: Renesas Electronics America
  • Channel Type: N-channel
  • Maximum Power Dissipation: 40.3W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current (25°C): 3A (Ta)
  • Maximum Rds On (Id,Vgs): 3.2 Ohm @ 1.5A, 10V
  • Maximum Input Capacitance: 280pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT) technology
  • Supply and Demand Status: balanced

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