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Same model may have multiple batches, images only for reference.
PDTD113ZT,215
Same model may have multiple batches, images only for reference.

PDTD113ZT,215

Part No PDTD113ZT,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V TO236AB
Datasheet
PDTD113ZT,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Nexperia USA Inc.
Package Tape & Reel
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Base Product Number PDTD113
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 957989-PDTD113ZT,215
Ultra Librarian 3D Model Ultra Librarian PDTD113ZT,215 CAD Model

Description

The 957989-PDTD113ZT,215 is a pre-biased NPN bipolar transistor in the TO-236-3, SC-59, SOT-23-3 package. 957989-PDTD113ZT,215 is a pre-biased NPN bipolar transistor in the TO-236-3, SC-59, SOT-23-3 package.

  • Power Rating: 250mW
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 500mA
  • Vce Saturation: 300mV @ 2.5mA and 50mA
  • Collector Cutoff Current: 500nA
  • DC Current Gain: 70 @ 50mA and 5V
  • Mounting: Surface Mount
  • Packaging: Tape and reel
  • Product Status: Active
  • Standard Package: 3,000 pieces

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750+ $0.1336 $100.2000
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2,165+ $0.1155 $250.0575
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