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Same model may have multiple batches, images only for reference.
PEMB9,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PEMB9,115

Part No PEMB9,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SOT666
Datasheet
PEMB9,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 5mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1087475-PEMB9,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PEMB9,115 CAD Model

Description

The Nexperia USA Inc. 1087475-PEMB9,115 is a PNP dual transistor that is pre-biased.

  • Base Resistor (R1): 10k ohms
  • Emitter-Base Resistor (R2): 47k ohms
  • Mounting Type: SMD (SMT)
  • Packaging: Reel
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Collector Cut-Off Current: 1μA
  • Typical Gain (hFE): 100 @ 5mA, 5V
  • Maximum Power Dissipation: 300mW
  • Supply and Demand Status: Sufficient

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