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Same model may have multiple batches, images only for reference.
PH6325L,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PH6325L,115

Part No PH6325L,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 78.7A LFPAK
Datasheet
PH6325L,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 78.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 13.3nC @ 4.5V
Max Input Capacitance 1871pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1087765-PH6325L,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH6325L,115 CAD Model

Description

The Nexperia USA Inc. PH6325L,115 is an N-channel MOSFET electronic component that is designed for discrete semiconductor products.

  • Type: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: LFPAK56, Power-SO8
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 78.7A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: Balance

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Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
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