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PMDPB30XN,115

Part No PMDPB30XN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4A 6HUSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 40 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 21.7nC @ 4.5V
Max Input Capacitance 660pF @ 10V
Maximum Power Dissipation 490mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089506-PMDPB30XN,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMDPB30XN,115 CAD Model

Description

The Nexperia USA Inc. PMDPB30XN,115 is a dual 2 N-Channel FET with a logic level gate.

  • Supply and Demand Status: Limited
  • Package: DFN2020-6
  • Power Dissipation: 490mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4A @ 25°C
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Max Gate Charge: 21.7nC @ 4.5V
  • Max Input Capacitance: 660pF @ 10V
  • Maximum Rds On @ Id,Vgs: 40 mOhm @ 3A, 4.5V
  • Alternative Parts: PMDPB30XN

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4245 $50.9400
255+ $0.3977 $101.4135
395+ $0.3842 $151.7590
560+ $0.3574 $200.1440
730+ $0.3439 $251.0470
910+ $0.3305 $300.7550
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 50,320 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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