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PMDPB55XP,115

Part No PMDPB55XP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.4A 6HUSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 785pF @ 10V
Maximum Power Dissipation 490mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1089509-PMDPB55XP,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMDPB55XP,115 CAD Model

Description

The PMDPB55XP,115 is a dual 2 P-Channel logic level gate FET type discrete semiconductor product mounted in SMD (SMT) packaging from Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Device Type: Dual 2 P-Channel Logic Level Gate FET
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.4A @ 25°C
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Power Dissipation: 490mW
  • Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: High
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3307 $51.2585
370+ $0.2713 $100.3810
575+ $0.2629 $151.1675
790+ $0.2544 $200.9760
1,020+ $0.2459 $250.8180
1,365+ $0.2205 $300.9825
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 120,966 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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