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Same model may have multiple batches, images only for reference.
PMG85XP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMG85XP,115

Part No PMG85XP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A 6TSSOP
Datasheet
PMG85XP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.15V @ 250μA
Max Gate Charge 7.2nC @ 4.5V
Max Input Capacitance 560pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 375mW (Ta), 2.4W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1089672-PMG85XP,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMG85XP,115 CAD Model

Description

The PMG85XP,115 from Nexperia USA Inc. is a P-channel MOSFET with a drive voltage (Max Rds On, Min Rds On) of 2.5V, 4.5V.

  • Power Dissipation (Max): 375mW (Ta), 2.4W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 6-TSSOP, SC-88, SOT-363
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2A (Tj)
  • Gate-Source Threshold Voltage: 1.15V @ 250μA
  • Maximum Gate Charge: 7.2nC @ 4.5V
  • Max Input Capacitance: 560pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 115 mOhm @ 2A, 4.5V

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Quantity Unit Price Ext. Price
75+ $0.6891 $51.6825
180+ $0.5655 $101.7900
275+ $0.5478 $150.6450
380+ $0.5301 $201.4380
490+ $0.5125 $251.1250
655+ $0.4594 $300.9070
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