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Same model may have multiple batches, images only for reference.
PMGD280UN,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMGD280UN,115

Part No PMGD280UN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.87A 6TSSOP
Datasheet
PMGD280UN,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 870mA
Maximum Rds On at Id,Vgs 340 mOhm @ 200mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.89nC @ 4.5V
Max Input Capacitance 45pF @ 20V
Maximum Power Dissipation 400mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1089676-PMGD280UN,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMGD280UN,115 CAD Model

Description

The Nexperia USA Inc. electronic component with the Win Source Part Number 1089676-PMGD280UN,115 is a sufficient supply and demand item with medium popularity.

  • Component Type: 2 N-Channel (Dual) FET
  • Gate Feature: Logic Level
  • Maximum Power Dissipation: 400mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 870mA @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On: 340 mOhm @ 200mA, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1499 $50.2165
715+ $0.1404 $100.3860
1,110+ $0.1356 $150.5160
1,585+ $0.1262 $200.0270
2,060+ $0.1214 $250.0840
2,575+ $0.1167 $300.5025
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Availability: 144,000 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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