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Same model may have multiple batches, images only for reference.
PMGD290UCEAX Real Image
Same model may have multiple batches, images only for reference.

PMGD290UCEAX

Part No PMGD290UCEAX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 6TSSOP
Datasheet
PMGD290UCEAX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 725mA, 500mA
Maximum Rds On at Id,Vgs 380 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 0.68nC @ 4.5V
Max Input Capacitance 83pF @ 10V
Maximum Power Dissipation 280mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1089677-PMGD290UCEAX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMGD290UCEAX CAD Model

Description

The Nexperia USA Inc. PMGD290UCEAX is a N and P-Channel FET with logic level gate feature.

  • Channels: N and P-Channel
  • Gate Feature: Logic Level Gate
  • Maximum Power Dissipation: 280mW
  • Drain-Source Breakdown Voltage: 20V
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Commonly Used In: Electronic Circuitry for Switching Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.9642 $55.7136
18+ $5.7143 $102.8574
28+ $5.5357 $154.9996
38+ $5.3571 $203.5698
49+ $5.1786 $253.7514
65+ $4.6428 $301.7820
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Availability: 9,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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