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Same model may have multiple batches, images only for reference.
PMGD780SN,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMGD780SN,115

Part No PMGD780SN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.49A 6TSSOP
Datasheet
PMGD780SN,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 490mA
Maximum Rds On at Id,Vgs 920 mOhm @ 300mA, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 1.05nC @ 10V
Max Input Capacitance 23pF @ 30V
Maximum Power Dissipation 410mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1089680-PMGD780SN,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMGD780SN,115 CAD Model

Description

The Nexperia PMGD780SN,115 is a dual N-channel FET with a drain-source breakdown voltage of 60V and a continuous drain current of 490mA @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 490mA @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 1.05nC @ 10V
  • Maximum Rds On: 920 mOhm @ 300mA and 10V
  • Package: 6-TSSOP
  • Maximum Power Dissipation: 410mW
  • Type: Logic-Level Gate FET
  • Applications: Discrete semiconductor products

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Quantity Unit Price Ext. Price
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255+ $0.3999 $101.9745
390+ $0.3874 $151.0860
535+ $0.3749 $200.5715
690+ $0.3624 $250.0560
925+ $0.3250 $300.6250
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