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Same model may have multiple batches, images only for reference.
PMK50XP,518 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMK50XP,518

Part No PMK50XP,518
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7.9A 8-SOIC
Datasheet
PMK50XP,518 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 1020pF @ 20V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 5W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1089684-PMK50XP,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMK50XP,518 CAD Model

Description

The Nexperia USA Inc. PMK50XP,518 is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 5W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7.9A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 50 mOhm @ 2.8A, 4.5V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)

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