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PMN27UP,115 Nexperia USA Inc. PMN27UP,115 label picture PMN27UP,115 label picture 2 PMN27UP,115 label picture 3
Same model may have multiple batches, images only for reference.
PMN27UP,115 Nexperia USA Inc. PMN27UP,115 label picture PMN27UP,115 label picture 2 PMN27UP,115 label picture 3
PMN27UP,115 Nexperia USA Inc. PMN27UP,115 label picture PMN27UP,115 label picture 2 PMN27UP,115 label picture 3
Same model may have multiple batches, images only for reference.

PMN27UP,115

Part No PMN27UP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.7A 6TSOP
Datasheet
PMN27UP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 2340pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 540mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089697-PMN27UP,115
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMN27UP,115 CAD Model

Description

The Nexperia USA Inc. PMN27UP,115 is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 20V and a Continuous Drain Current at 25°C of 5.7A (Ta).

  • Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Packaging: 6-TSOP
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 32 mOhm @ 2.4A, 4.5V
  • Popularity: popular
  • Supply and Demand Status: sufficient

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