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Same model may have multiple batches, images only for reference.
PMN42XPEAX Real Image
Same model may have multiple batches, images only for reference.

PMN42XPEAX

Part No PMN42XPEAX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V SC-74
Datasheet
PMN42XPEAX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 17.3nC @ 4.5V
Max Input Capacitance 1410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta), 8.33W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 1089707-PMN42XPEAX
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMN42XPEAX CAD Model

Description

The PMN42XPEAX is a P-channel MOSFET manufactured by Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Channel Type: P-channel
  • Maximum Power Dissipation: 500mW (Ta), 8.33W (Tc)
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: SC-74, SOT-457
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.25V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 46 mOhm @ 3A, 4.5V
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1445 $50.5750
740+ $0.1352 $100.0480
1,150+ $0.1306 $150.1900
1,655+ $0.1212 $200.5860
2,145+ $0.1166 $250.1070
2,685+ $0.1119 $300.4515
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Availability: 52,400 pieces
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