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Same model may have multiple batches, images only for reference.
PMV20XNEAR Real Image
Same model may have multiple batches, images only for reference.

PMV20XNEAR

Part No PMV20XNEAR
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO-236AB
Datasheet
PMV20XNEAR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 930pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 460mW (Ta), 6.94W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 6.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089780-PMV20XNEAR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMV20XNEAR CAD Model

Description

The PMV20XNEAR is an N-channel MOSFET transistor from Nexperia USA Inc.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-channel MOSFET transistor
  • Packaging: Reel - TR
  • Maximum Power Dissipation: 460mW @ Ta and 6.94W @ Tc
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On: 20 mOhm @ 6.3A and 4.5V
  • Gate-Source Threshold Voltage: 1.25V @ 250μA
  • Drive Voltage: 2.5V to 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7128 $53.4600
150+ $0.6677 $100.1550
235+ $0.6452 $151.6220
335+ $0.6000 $201.0000
435+ $0.5775 $251.2125
545+ $0.5549 $302.4205
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