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Same model may have multiple batches, images only for reference.
PMV90ENER Real Image
Same model may have multiple batches, images only for reference.

PMV90ENER

Part No PMV90ENER
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description PMV90ENE/TO-236AB/REEL 7" Q3/T
Datasheet
PMV90ENER Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 5.5nC @ 10V
Max Input Capacitance 160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 460mW (Ta)
Maximum Rds On at Id,Vgs 72 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1089807-PMV90ENER
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV90ENER CAD Model

Description

The Nexperia USA Inc. PMV90ENER is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 3A at 25°C.

  • Maximum Rds On @ Id,Vgs: 72 mOhm @ 3A, 10V
  • Max Gate Charge: 5.5nC @ 10V
  • Maximum Input Capacitance: 160pF @ 15V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Package: TO-236AB
  • Mounting: SMD (SMT) technology
  • Temperature Range: -55°C to 150°C

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