The PMXB65UPEZ is a P-channel enhancement mode Field-Effect Transistor (FET) from Nexperia USA Inc. It's designed for load switch and general purpose switching applications where low on-state resistance and compact size are critical. The device is housed in a DFN2020D-3 (SOT1220) leadless ultra small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Applications:

• Load switches in portable devices (e.g., smartphones, tablets)
• Power management circuits
• Battery protection circuits
• DC-DC converters
• General purpose switching

Features:

• Trench MOSFET technology
• Very low on-state resistance (RDS(on))
• Logic level gate drive
• Ultra small DFN2020D-3 package
• Leadless package for improved thermal performance

Benefits:

• High efficiency: The very low RDS(on) minimizes power losses and improves energy efficiency in switching applications.
• Space saving: The ultra-small DFN2020D-3 package enables compact circuit designs, crucial for portable devices.
• Logic level compatible: The logic level gate drive allows direct control from microcontrollers and other logic devices.
• Improved thermal performance: The leadless package improves heat dissipation, enhancing the reliability of the device.
• Reduced voltage drop: Low RDS(on) minimizes voltage drop across the switch.

Technical Specifications:

The PMXB65UPEZ has a drain-source voltage (VDS) of -20V. The gate-source voltage (VGS) is ±8V. The continuous drain current (ID) is -6.5A. The typical on-state resistance (RDS(on)) at VGS = -4.5V and ID = -6.5A is 21 mΩ. The threshold voltage (VGS(th)) is between -0.45V and -1V. It has a total gate charge (QG) of 7.8 nC. Power dissipation is 1.6W. The operating junction temperature range is -55°C to +150°C.

This MOSFET is optimized for low voltage, low on-resistance switching applications where space is limited. The trench MOSFET technology allows for a high current density and low RDS(on) in a small footprint.