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Same model may have multiple batches, images only for reference.
PMZ1000UN,315 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PMZ1000UN,315

Part No PMZ1000UN,315
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH SOT883
Datasheet
PMZ1000UN,315 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 0.89nC @ 4.5V
Max Input Capacitance 43pF @ 25V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN1006-3
Dimension SC-101, SOT-883
Win Source Part Number 1089815-PMZ1000UN,315
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMZ1000UN,315 CAD Model

Description

The Nexperia USA Inc. PMZ1000UN,315 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 480mA @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 480mA
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate Charge: 0.89nC @ 4.5V
  • Maximum Input Capacitance: 43pF @ 25V
  • Maximum Rds On @ Id, Vgs: 1 Ohm @ 200mA, 4.5V
  • Package: DFN1006-3
  • Suitable for Use in: discrete semiconductor products.

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Quantity Unit Price Ext. Price
35+ $1.4902 $52.1570
85+ $1.2227 $103.9295
130+ $1.1845 $153.9850
175+ $1.1463 $200.6025
230+ $1.1081 $254.8630
305+ $0.9935 $303.0175
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