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Same model may have multiple batches, images only for reference.
PSMN013-100ES,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN013-100ES,127

Part No PSMN013-100ES,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V I2PAK / Trans MOSFET N-CH 100V 68A 3-Pin(3+Tab) I2PAK Rail
Datasheet
PSMN013-100ES,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 59nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3195pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 170W (Tc)
Rds On (Maximum) @ Id, Vgs 13.9 mOhm @ 15A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 792613-PSMN013-100ES,127
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN013-100ES
Introduction Date September 17, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PSMN013-100ES,127 CAD Model

Description

The Nexperia USA Inc. 792613-PSMN013-100ES,127 is a MOSFET technology-based electronic component used in various applications. Nexperia USA Inc..

  • Current Continuous Drain (Id): 68A (Tc) @ 25°C
  • Power Dissipation (maximum): 170W (Tc)
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: Limited
  • Popularity: Medium
  • Alternative Parts: SPI80N10L, PSMN013-100ES, STFI130N10F3, IRFSL4510PBF, 2SK3479-S-AZ, 2SK3479-S, 2SK3479-S-A
  • Manufacturer Package: I2PAK

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