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PSMN016-100PS,127

Part No PSMN016-100PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 2404pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 148W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090329-PSMN016-100PS,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN016-100PS,127 CAD Model

Description

The Nexperia USA Inc. PSMN016-100PS,127 is an N-Channel MOSFET with a drain-source breakdown voltage of 100V.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Power Dissipation: 148W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Rds On (Max): 16 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Case: TO-220AB
  • Mounting: Through hole
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6849 $58.9715
85+ $1.3825 $117.5125
130+ $1.3393 $174.1090
180+ $1.2961 $233.2980
235+ $1.2529 $294.4315
310+ $1.1234 $348.2540
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Availability: 21,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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