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Same model may have multiple batches, images only for reference.
PSMN022-30BL,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN022-30BL,118

Part No PSMN022-30BL,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A D2PAK
Datasheet
PSMN022-30BL,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 447pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 22.6 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090338-PSMN022-30BL,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN022-30BL,118 CAD Model

Description

The Nexperia USA Inc. PSMN022-30BL,118 is a N-channel MOSFET transistor with a maximum drain-source voltage of 30V and a continuous drain current of 30A @ 25°C.

  • On-State Resistance: 22.6 mOhm @ 5A and 10V
  • Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 41W

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Quantity Unit Price Ext. Price
4+ $15.3315 $61.3260
10+ $12.5791 $125.7910
15+ $12.1864 $182.7960
20+ $11.7937 $235.8740
26+ $11.3999 $296.3974
34+ $10.2206 $347.5004
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