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Same model may have multiple batches, images only for reference.
PSMN022-30PL,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN022-30PL,127

Part No PSMN022-30PL,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO220AB
Datasheet
PSMN022-30PL,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 447pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090339-PSMN022-30PL,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN022-30PL,127 CAD Model

Description

The Nexperia USA Inc. PSMN022-30PL,127 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 30A (Tc)
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 5A, 10V
  • Max Gate Charge: 9nC @ 10V
  • Case/Package: TO-220AB

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Quantity Unit Price Ext. Price
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26+ $5.8271 $151.5046
36+ $5.6391 $203.0076
46+ $5.4512 $250.7552
62+ $4.8873 $303.0126
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