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Same model may have multiple batches, images only for reference.
PSMN1R4-30YLDX Real Image
Same model may have multiple batches, images only for reference.

PSMN1R4-30YLDX

Part No PSMN1R4-30YLDX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
PSMN1R4-30YLDX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 1mA
Max Gate Charge 54.8nC @ 10V
Max Input Capacitance 3840pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 166W (Tc)
Maximum Rds On at Id,Vgs 1.42 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090371-PSMN1R4-30YLDX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN1R4-30YLDX CAD Model

Description

The PSMN1R4-30YLDX is an N-channel MOSFET manufactured by Nexperia USA Inc.

  • Maximum Drain-Source Voltage: 30 V
  • Maximum Continuous Drain Current: 100 A
  • Package: LFPAK56

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Quantity Unit Price Ext. Price
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52+ $1.9249 $100.0948
81+ $1.8647 $151.0407
111+ $1.8046 $200.3106
144+ $1.7444 $251.1936
192+ $1.5640 $300.2880
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