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Same model may have multiple batches, images only for reference.
PSMN1R5-40PS,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN1R5-40PS,127

Part No PSMN1R5-40PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO220AB
Datasheet
PSMN1R5-40PS,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 136nC @ 10V
Max Input Capacitance 9710pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 338W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090375-PSMN1R5-40PS,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN1R5-40PS,127 CAD Model

Description

The PSMN1R5-40PS,127 is an N-channel MOSFET from Nexperia USA Inc.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 136nC @ 10V
  • Maximum Rds On: 1.6 mOhm @ 25A, 10V

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144+ $2.0062 $288.8928
193+ $1.7983 $347.0719
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