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PSMN1R7-30YL,115

Part No PSMN1R7-30YL,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 77.9nC @ 10V
Max Input Capacitance 5057pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 109W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090377-PSMN1R7-30YL,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN1R7-30YL,115 CAD Model

Description

The Nexperia PSMN1R7-30YL,115 is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 100A @ 25°C.

  • Manufacturer: Nexperia
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Rds On: 1.7 mOhm @ 15A, 10V
  • Maximum Gate Charge: 77.9nC @ 10V
  • Package: LFPAK56, Power-SO8
  • Power Dissipation: 109W (Tc)
  • Application: Discrete semiconductor products such as power supplies and motor control circuits
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.1177 $53.0009
40+ $2.5581 $102.3240
61+ $2.4782 $151.1702
84+ $2.3983 $201.4572
108+ $2.3183 $250.3764
145+ $2.0785 $301.3825
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Availability: 6,900 pieces
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