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Same model may have multiple batches, images only for reference.
PSMN2R2-40BS,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R2-40BS,118

Part No PSMN2R2-40BS,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A D2PAK
Datasheet
PSMN2R2-40BS,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 8423pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 306W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090385-PSMN2R2-40BS,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN2R2-40BS,118 CAD Model

Description

The Nexperia PSMN2R2-40BS,118 is an N-channel MOSFET that has a drain-source breakdown voltage of 40V and a maximum Rds On @ Id,Vgs of 2.2 mOhm @ 25A and 10V.

  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 130nC @ 10V
  • Package: D2PAK
  • Maximum Power Dissipation: 306W @ Tc
  • Continuous Drain Current: 100A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 8423pF @ 20V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand: Balance

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