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PSMN2R5-30YL,115

Part No PSMN2R5-30YL,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 3468pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090389-PSMN2R5-30YL,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN2R5-30YL,115 CAD Model

Description

The Nexperia USA Inc. PSMN2R5-30YL,115 is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V and Continuous Drain Current @ 25°C of 100A (Tc).

  • Gate-Source Threshold Voltage: 2.15V @ 1mA
  • Maximum Gate Charge: 57nC @ 10V
  • Maximum Rds On @ Id,Vgs: 2.4 mOhm @ 15A, 10V
  • Package: LFPAK56, Power-SO8 (SC-100, SOT-669)
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 88W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7960 $51.7400
155+ $0.6532 $101.2460
240+ $0.6328 $151.8720
330+ $0.6124 $202.0920
425+ $0.5919 $251.5575
570+ $0.5307 $302.4990
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 9,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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