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Same model may have multiple batches, images only for reference.
PSMN2R7-30PL,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN2R7-30PL,127

Part No PSMN2R7-30PL,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V TO220AB
Datasheet
PSMN2R7-30PL,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 3954pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090394-PSMN2R7-30PL,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN2R7-30PL,127 CAD Model

Description

The PSMN2R7-30PL,127 is a N-channel MOSFET transistor manufactured by Nexperia USA Inc.

  • Power Dissipation: 170W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.15V @ 1mA
  • Maximum Rds On @ Id, Vgs: 2.7 mOhm @ 15A, 10V
  • Package: TO-220AB
  • Mounting: Through Hole
  • Technology: N-Channel
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Sufficient

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25+ $11.7822 $294.5550
33+ $10.5636 $348.5988
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