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PSMN4R8-100BSEJ Real Image PSMN4R8-100BSEJ real image10960 PSMN4R8-100BSEJ real image10961 PSMN4R8-100BSEJ Real Image
Same model may have multiple batches, images only for reference.
PSMN4R8-100BSEJ Real Image PSMN4R8-100BSEJ real image10960 PSMN4R8-100BSEJ real image10961 PSMN4R8-100BSEJ Real Image
PSMN4R8-100BSEJ Real Image PSMN4R8-100BSEJ real image10960 PSMN4R8-100BSEJ real image10961 PSMN4R8-100BSEJ Real Image
Same model may have multiple batches, images only for reference.

PSMN4R8-100BSEJ

Part No PSMN4R8-100BSEJ
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V D2PAK
Datasheet
PSMN4R8-100BSEJ Datasheet
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 278nC @ 10V
Max Input Capacitance 14400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 405W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090425-PSMN4R8-100BSEJ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name PSMN4R8-100BSE
Introduction Date April 12, 2013
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PSMN4R8-100BSEJ CAD Model

Description

The PSMN4R8-100BSEJ is an N-channel MOSFET manufactured by Nexperia USA Inc.

  • Mounting: SMD
  • Category: Discrete semiconductor products
  • Power Dissipation: 405W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 120A (Tj) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 278nC @ 10V
  • Max Input Capacitance: 14400pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: D2PAK (TO-263-3, D2Pak (2 Leads + Tab), TO-263AB)
  • Compliance: Halogen-free
  • Usage: Common-used part
  • Estimated EOL Date: 2027
  • ECCN: EAR99
  • Country of Origin: Philippines

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