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Same model may have multiple batches, images only for reference.
PSMN5R5-60YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN5R5-60YS,115

Part No PSMN5R5-60YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A LFPAK
Datasheet
PSMN5R5-60YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 3501pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090429-PSMN5R5-60YS,115
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Defence, Military & Aerospace, Medical
Ultra Librarian 3D Model Ultra Librarian PSMN5R5-60YS,115 CAD Model

Description

The Nexperia USA Inc. PSMN5R5-60YS,115 is an N-Channel MOSFET that is designed for use in power management, defence, military & aerospace, and medical applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 100A @ 25°C
  • Rds On: 5.2 mOhm @ 15A, 10V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 3501pF @ 30V
  • Package: LFPAK56, Power-SO8
  • Dimension: SC-100, SOT-669
  • Power Dissipation: 130W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Packaging: Reel of 1,500

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32+ $6.4286 $205.7152
41+ $6.2143 $254.7863
54+ $5.5714 $300.8556
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