The PSMN6R9-100YSFQ is a 100 V, 6.9 mΩ logic level MOSFET from Nexperia. It's designed for high-efficiency power switching applications and features a TrenchMOS technology for optimized performance.

Applications:

• DC-DC converters
• Motor control
• Power supplies
• Battery management systems
• Load switches

Features:

• Low on-state resistance (Rds(on)): 6.9 mΩ at Vgs = 10 V
• Logic level gate drive
• TrenchMOS technology
• Low thermal resistance
• Automotive qualified to AEC-Q101
• LFPAK56D power package

Benefits:

• High efficiency due to low on-state resistance.
• Simplified gate drive circuitry due to logic level gate drive.
• Improved thermal performance.
• Reliable operation in harsh automotive environments.
• Small footprint and high power density.

Additional Details:

The PSMN6R9-100YSFQ has a continuous drain current (Id) of up to 80 A. It has a gate-source voltage (Vgs) range of ±20 V. The device operates over a temperature range of -55°C to +175°C. The LFPAK56D package offers excellent thermal performance and allows for efficient heat dissipation. This MOSFET is designed for switching applications where high efficiency and reliability are critical.