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PSMN7R0-30MLC

Part No PSMN7R0-30MLC
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description PSMN7R0-30MLC - N-CHANNEL 30 V 7
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Nexperia USA Inc.
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 834305-PSMN7R0-30MLC
Ultra Librarian 3D Model Ultra Librarian PSMN7R0-30MLC CAD Model

Description

The PSMN7R0-30MLC is a 30 V, Logic level, N-channel MOSFET in LFPAK33 (SOT1210) package using TrenchMOS technology. This product is designed for high efficiency DC-DC conversion, load switch and motor control applications. This MOSFET offers a superior combination of low on-state resistance and fast switching speeds, which contributes to optimized power efficiency and reduced energy consumption.

Applications

  • DC-DC converters
  • Load switching
  • Motor control
  • Power management systems

Features

  • TrenchMOS technology
  • Logic level gate drive
  • Low on-state resistance: R<sub>DS(on) = 7 mΩ (typical) at V<sub>GS = 4.5 V
  • Fast switching speed
  • Low Q<sub>GD for reduced switching losses
  • LFPAK33 (SOT1210) package for optimal thermal performance
  • Lead-free and RoHS compliant

Benefits

  • High efficiency: Reduced power losses in DC-DC conversion and other power applications.
  • Compact design: LFPAK33 package offers a small footprint for space-constrained applications.
  • Simplified gate drive: Logic level gate drive allows direct interfacing with microcontrollers and other low-voltage control circuits.
  • Improved thermal performance: Effective heat dissipation due to the package design allows for reliable operation at higher currents.
  • Environmentally friendly: Compliant with lead-free and RoHS standards.

Additional Details

The PSMN7R0-30MLC operates with a drain-source voltage (V<sub>DS) of up to 30V and is capable of handling continuous drain currents (I<sub>D) of up to 25A (dependent on application and cooling). Its low gate charge (Q<sub>g) minimizes the drive power requirements, and the fast switching characteristics enable the design of high-frequency power converters. This MOSFET is an excellent choice for demanding applications that require both efficiency and compact size. The device's robust design and excellent thermal characteristics provide long-term reliability in various operating conditions. It's commonly used in synchronous rectification, power supplies, and battery-powered devices where efficiency is paramount. Furthermore, the logic-level gate drive enables easy integration with low-voltage microcontrollers and digital signal processors, simplifying the design of control circuitry. The combination of low on-state resistance and fast switching provides a significant advantage in minimizing power dissipation and maximizing overall system efficiency. The LFPAK33 package, with its optimized leadframe design, ensures efficient heat transfer from the device to the ambient environment or a heat sink, maintaining a low junction temperature and contributing to the longevity of the component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.1229 $64.1061
20+ $5.8443 $116.8860
31+ $5.6618 $175.5158
43+ $5.4793 $235.6099
55+ $5.2968 $291.3240
73+ $4.7482 $346.6186
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,100 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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