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Same model may have multiple batches, images only for reference.
PSMN7R6-60BS,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN7R6-60BS,118

Part No PSMN7R6-60BS,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 92A D2PAK
Datasheet
PSMN7R6-60BS,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 38.7nC @ 10V
Max Input Capacitance 2651pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 149W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1090444-PSMN7R6-60BS,118
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian PSMN7R6-60BS,118 CAD Model

Description

The Nexperia USA Inc. PSMN7R6-60BS,118 is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 92A @ 25°C.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 92A
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 38.7nC @ 10V
  • Maximum Input Capacitance: 2651pF @ 30V
  • Maximum Rds On: 7.8 mOhm @ 25A, 10V
  • Power Dissipation: 149W (Tc)
  • Mounting: SMD (SMT)
  • Package: D2PAK
  • Supply and Demand: Balanced
  • Popularity: Medium
  • Applications: Automotive and power management

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