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Same model may have multiple batches, images only for reference.
PSMN8R3-40YS,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN8R3-40YS,115

Part No PSMN8R3-40YS,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A LFPAK
Datasheet
PSMN8R3-40YS,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1215pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 8.6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 1090448-PSMN8R3-40YS,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN8R3-40YS,115 CAD Model

Description

The Nexperia USA Inc. PSMN8R3-40YS,115 is an N-channel MOSFET discrete semiconductor product.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 70A (Tc) @ 25°C
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 1215pF @ 20V
  • Case/Package: LFPAK56, Power-SO8
  • Dimension: SOT-669
  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
305+ $0.1644 $50.1420
745+ $0.1349 $100.5005
1,150+ $0.1307 $150.3050
1,585+ $0.1265 $200.5025
2,045+ $0.1223 $250.1035
2,740+ $0.1096 $300.3040
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