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Same model may have multiple batches, images only for reference.
PUMF11,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMF11,115

Part No PUMF11,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN PREBIAS/PNP 6TSSOP
Datasheet
PUMF11,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN Pre-Biased, 1 PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V, 40V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 5V / 120 @ 1mA, 6V
Max Vce (sat) 150mV @ 500μA, 10mA / 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 1μA
Frequency - Transition 100MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1090719-PUMF11,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PUMF11,115 CAD Model

Description

The Nexperia USA Inc. PUMF11,115 is a pre-biased NPN and PNP transistor that is perfect for use in a variety of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 50V and 40V
  • Maximum Current Collector: 100mA
  • Frequency Transition: up to 100MHz
  • Resistor-Base: 22k
  • Resistor-Emitter Base: 47k
  • Collector Cut-Off Current: 1μA
  • Typical Gain (hFE): 80 @ 5mA and 5V and 120 @ 1mA and 6V
  • Package: 6-TSSOP package
  • Availability: available on a reel
  • Maximum Power Dissipation: 300mW

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Quantity Unit Price Ext. Price
240+ $0.2426 $58.2240
585+ $0.1987 $116.2395
900+ $0.1929 $173.6100
1,245+ $0.1860 $231.5700
1,605+ $0.1802 $289.2210
2,145+ $0.1617 $346.8465
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