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Same model may have multiple batches, images only for reference.
PUMH13F
Same model may have multiple batches, images only for reference.

PUMH13F

Part No PUMH13F
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS SOT363/SC88
Datasheet
PUMH13F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition -
Power - Max 300mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Base Product Number PUMH13
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1376938-PUMH13F
Ultra Librarian 3D Model Ultra Librarian PUMH13F CAD Model

Description

The PUMH13F is a bipolar transistor array designed for use in discrete semiconductor products.

  • Series: Automotive, AEC-Q101
  • Manufacturer: Nexperia USA Inc.
  • Configuration: Two NPN transistors in a pre-biased configuration
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Base Resistors: 4.7kΩ and 47kΩ
  • DC Current Gain: 100 @ a collector current of 10mA and a collector-emitter voltage of 5V
  • Maximum Vce Saturation: 100mV @ a base current of 250μA and a collector current of 5mA
  • REACH: Unaffected
  • ECCN: EAR99

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