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Same model may have multiple batches, images only for reference.
PUMZ1,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMZ1,115

Part No PUMZ1,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 0.1A 6TSSOP
Datasheet
PUMZ1,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 200mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 1mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP, SC-88
Win Source Part Number 1090735-PUMZ1,115
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian PUMZ1,115 CAD Model

Description

The Nexperia USA Inc. 1090735-PUMZ1,115 is an NPN, PNP transistor with a maximum collector-emitter breakdown voltage of 40V.

  • Transistor Type: NPN, PNP
  • Collector-Emitter Breakdown Voltage: 40V
  • Maximum Current Collector: 100mA
  • Collector Cut-Off Current (ICBO): 100nA
  • Typical Gain (hFE): 120 @ 1mA, 6V
  • Maximum Power Dissipation: 300mW
  • Frequency Transition: 100MHz
  • Temperature Range: 150°C (TJ)
  • Package: 6-TSSOP, SC-88
  • Mounting Type: SMD (SMT)
  • Application: Industrial and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
565+ $0.0885 $50.0025
1,210+ $0.0828 $100.1880
1,875+ $0.0800 $150.0000
2,695+ $0.0743 $200.2385
3,505+ $0.0714 $250.2570
4,375+ $0.0686 $300.1250
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