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Same model may have multiple batches, images only for reference.
2N5686 Real Image
Same model may have multiple batches, images only for reference.

2N5686

Part No 2N5686
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 50A TO204
Datasheet
2N5686 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 50 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 2.5A, 25A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A, 2V
Power - Max 300 W
Frequency - Transition 2MHz
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AE
Supplier Device Package TO-204 (TO-3)
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 541317-2N5686
Ultra Librarian 3D Model Ultra Librarian 2N5686 CAD Model

Description

The 541317-2N5686 is a bipolar transistor that belongs to the single bipolar transistor series.

  • Series: Single Bipolar Transistor
  • Application: Discrete Semiconductor Products, Transistor
  • Maximum Power Rating: 300W
  • Maximum Collector-Emitter Breakdown Voltage: 80V
  • Maximum Collector Current: 50A
  • Transistor Type: NPN
  • Vce Saturation: 1V @ 2.5A and 25A
  • DC Current Gain: 15 @ 25A and 2V
  • Package: TO-204AE Through Hole
  • Product Status: Active
  • Manufacturer: NTE

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