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Same model may have multiple batches, images only for reference.
2N6725
Same model may have multiple batches, images only for reference.

2N6725

Part No 2N6725
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 50V 1A TO237
Datasheet
2N6725 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V
Power - Max 1 W
Mounting Type Through Hole
Package / Case TO-237AA
Supplier Device Package TO-237
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849998-2N6725
Ultra Librarian 3D Model Ultra Librarian 2N6725 CAD Model

Description

The 849998-2N6725 is a NPN Darlington bipolar transistor designed for applications in discrete semiconductor products, specifically in transistors. Bold the product name (e.g., BAV99S,135 → 849998-2N6725) and manufacturer (e.g., Nexperia USA Inc. → NTE).

  • Type: NPN Darlington
  • Power: 1 W
  • Voltage Breakdown (Collector-Emitter): 50 V
  • Maximum Collector Current: 1 A
  • Vce Saturation: 1.5V @ 2mA and 1A
  • DC Current Gain (hFE): 4000 @ 1A and 5V
  • Mounting Type: Through Hole
  • Package: TO-237AA
  • Status: Active

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