The N25Q128A13EF8A0F is a 128 Megabit (16MB) Serial Flash Memory device manufactured by Micron Technology (Numonyx B.V. was acquired by Micron). This memory device is designed for a wide range of applications requiring non-volatile storage, particularly in embedded systems where space and power are constrained. It features high performance, low power consumption, and a compact form factor.

Applications

• Embedded Systems: Storing boot code, configuration data, and application code in microcontrollers and microprocessors.
• Wireless Communication Modules: Storing firmware and configuration settings in Wi-Fi, Bluetooth, and Zigbee modules.
• Consumer Electronics: Storing user data, firmware, and multimedia content in digital cameras, MP3 players, and other portable devices.
• Industrial Control Systems: Storing program code and data in programmable logic controllers (PLCs) and other industrial automation equipment.
• Networking Equipment: Storing boot code and configuration settings in routers, switches, and other network devices.

Features

• 128 Megabit (16MB) Density: Provides ample storage capacity for various applications.
• Serial Peripheral Interface (SPI): Enables simple and efficient communication with microcontrollers and microprocessors.
• Quad SPI (QSPI): Supports high-speed data transfer rates for faster read and write operations.
• Low Power Consumption: Designed for low power operation, extending battery life in portable devices.
• Page Program: Allows for efficient writing of data in page-sized blocks.
• Sector Erase and Block Erase: Provides flexible erase options for efficient memory management.
• Software Write Protection: Protects the memory contents from accidental or unauthorized modification.

Benefits

• Non-Volatile Storage: Retains data even when power is removed.
• High Performance: QSPI interface enables fast data transfer rates.
• Low Power Consumption: Extends battery life in portable applications.
• Small Footprint: Compact package size saves board space.
• Reliable Data Storage: Ensures data integrity and longevity.

Additional Details

The N25Q128A13EF8A0F operates with a supply voltage of typically 2.7V to 3.6V. It supports SPI modes 0 and 3. The device has a typical endurance of 100,000 program/erase cycles. It is available in various package options such as SOIC, WSON, and BGA. Detailed specifications, including read/write speeds, operating temperature range, and power consumption figures, are available in the product datasheet. The memory device also features a deep power-down mode for ultra-low power consumption during extended periods of inactivity. The device is RoHS compliant.