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1N60G

Part No 1N60G
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description SOT-223 N-CHANNEL POWER MOSFETS / N-Channel 600 V 1A (Tj) Surface Mount SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr NXP
Series UMW
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
Standard Package 2,500 pcs
Win Source Part Number 1380627-1N60G
Ultra Librarian 3D Model Ultra Librarian 1N60G CAD Model

Description

The 1N60G is a high-performance diode from NXP Semiconductors, designed to meet the rigorous demands of today's electronic devices. Renowned for its reliability and efficiency, this diode is a staple in the electronics industry, frequently used in a variety of applications ranging from power management to signal processing.

Key Features

  • High Reverse Voltage: The 1N60G is capable of withstanding high reverse voltages, making it suitable for applications that require robust voltage protection.
  • Fast Switching Speed: With its quick response time, this diode ensures minimal delay in switching applications, enhancing the performance of electronic circuits.
  • Low Forward Voltage Drop: The diode's low forward voltage drop contributes to reduced power loss and improved energy efficiency, which is critical for battery-powered devices.
  • High Surge Current Capability: It is designed to handle high surge currents, offering reliable performance under transient conditions and enhancing the durability of the end product.
  • Compact Package: The 1N60G comes in a small, compact package, allowing for easy integration into space-constrained designs without compromising on power or functionality.

Applications

The versatility of the 1N60G diode makes it ideal for a wide range of applications. It is commonly used in:

  • Power supply circuits
  • DC-DC converters
  • Rectification processes
  • Protection circuits in consumer electronics
  • Signal demodulation
  • High-frequency detectors and mixers

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the 1N60G is no exception. It is manufactured to the highest standards to ensure consistent performance and longevity. Engineers and designers can rely on this diode to deliver exceptional results in their products, backed by NXP's reputation for excellence in semiconductor technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0571 $50.2480
2,135+ $0.0469 $100.1315
3,305+ $0.0454 $150.0470
4,550+ $0.0440 $200.2000
5,885+ $0.0425 $250.1125
7,875+ $0.0381 $300.0375
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 535,364 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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