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2N3906,116

Part No 2N3906,116
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NXP USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 500 mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number 2N39
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1316192-2N3906,116
Ultra Librarian 3D Model Ultra Librarian 2N3906,116 CAD Model

Description

Product Overview: 2N3906,116 - NXP Semiconductors

The 2N3906,116 is a high-quality PNP Bipolar Junction Transistor (BJT) manufactured by NXP Semiconductors, a leader in the electronic components industry. This transistor is designed for general-purpose amplification and switching applications and is known for its reliability and performance in a wide range of electronic circuits.

Key Features

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: TO-92; a compact, through-hole package that is easy to install and handle.
  • Collector-Emitter Voltage (VCEO): 40V; allows for a good range of operation for various applications.
  • Collector Current (IC): Up to 200 mA; suitable for moderate current applications.
  • Power Dissipation (Pd): 625 mW; capable of dissipating a moderate amount of power without overheating.
  • DC Current Gain (hFE): High hFE at 100 to 300; ensures efficient current amplification.
  • Transition Frequency (fT): 250 MHz; suitable for applications requiring fast switching.
  • Operating Temperature: -55°C to +150°C; ensures stability and functionality across a wide temperature range.

Applications

The 2N3906,116 is versatile and can be used in various electronic applications such as:

  • Signal amplification in audio and radio frequency (RF) circuits
  • Switching operations in power management systems
  • Driver stages in amplifiers and regulators
  • Load switching and interfacing in embedded systems

Quality and Reliability

NXP Semiconductors ensures that the 2N3906,116 meets strict quality standards, providing excellent reliability for both commercial and industrial applications. The device is characterized for operation from -55°C to +150°C, making it suitable for challenging environments.

Environmental Compliance

The 2N3906,116 is compliant with RoHS (Restriction of Hazardous Substances) regulations, which means it is manufactured with a commitment to environmental protection and the restriction of certain dangerous substances commonly used in electronic equipment.

Overall, the 2N3906,116 from NXP Semiconductors is a dependable and efficient choice for designers and engineers looking for a general-purpose PNP transistor that offers consistent performance and a broad range of applications.

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