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2N5551,116

Part No 2N5551,116
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 160V 0.3A TO92-3  /  Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 630 mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number 2N55
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 2N5551 T/R-ND,2N5551 T/R,933215530116
Standard Package 2,000
Win Source Part Number 1036408-2N5551,116
Ultra Librarian 3D Model Ultra Librarian 2N5551,116 CAD Model

Description

The 2N5551,116 is a high-performance NPN bipolar transistor manufactured by NXP Semiconductors, designed for general-purpose switching and amplifier applications. This versatile component is a staple in electronic circuits due to its reliability and efficiency in handling moderate power levels.

Key Features

  • Voltage Capabilities: The 2N5551,116 boasts a collector-emitter voltage (Vceo) of 160V, which makes it suitable for high-voltage applications. This high breakdown voltage allows for a wide range of uses in electronic circuits.
  • Current Handling: With a continuous collector current (Ic) of 600mA, this transistor can handle a fair amount of current, which is ideal for driving moderate loads.
  • Power Dissipation: The device can dissipate up to 625mW of power, ensuring stable performance in various operating conditions without the risk of overheating.
  • High Gain Bandwidth Product: Featuring a transition frequency (ft) of 100MHz, the 2N5551,116 offers excellent frequency response, making it an excellent choice for amplifier circuits requiring high-speed operation.
  • Amplification Factor: It has a high DC current gain (hFE) range, typically from 80 to 300, providing a good level of amplification in electronic circuits.

Applications

The 2N5551,116 is suitable for a myriad of applications, including but not limited to:

  • Audio Amplifiers
  • Signal Processing
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits
  • General Purpose Switching

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the 2N5551,116 is no exception. It is designed to meet rigorous industry standards, ensuring high reliability and performance for the end-user. Whether for hobbyist projects or commercial products, this transistor is a dependable choice that offers consistent operation over its lifespan.

Package and Availability

The 2N5551,116 comes in a TO-92 package, which is widely used and easy to handle in various PCB designs. Its through-hole mounting design allows for easy installation and soldering, making it a user-friendly option for both DIY enthusiasts and professional engineers.

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