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2PB709BRL,215

Part No 2PB709BRL,215
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description NEXPERIA 2PB709 - SMALL SIGNAL B  /  Bipolar (BJT) Transistor PNP 50 V 200 mA 200MHz 250 mW Surface Mount TO-236AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NXP Semiconductors
Series Automotive, AEC-Q101
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V
Power - Max 250 mW
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
Other Names 2156-2PB709BRL,215-954
Standard Package 1
Win Source Part Number 1036464-2PB709BRL,215
Ultra Librarian 3D Model Ultra Librarian 2PB709BRL,215 CAD Model

Description

Product Overview: 2PB709BRL,215 - NXP Semiconductors

The 2PB709BRL,215 is a high-performance PNP bipolar transistor from NXP Semiconductors, designed to deliver reliable and efficient performance for a wide range of electronic applications. This transistor is well-suited for switching and amplification purposes, making it an essential component in modern electronic circuits.

Key Features:

  • Low V<sub>CEsat: The transistor provides a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency in operation.
  • High Current Gain: With its high current gain (h<sub>FE), this device ensures a robust amplification of the input signal, contributing to superior performance in various applications.
  • Surface-Mount Package: The 2PB709BRL,215 comes in a small SOT23 plastic package, making it suitable for surface-mount technology (SMT) and ideal for space-constrained applications.
  • Lead-Free and RoHS Compliant: This product meets environmental standards, being lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive, thus promoting sustainability.

Applications:

The versatility of the 2PB709BRL,215 makes it a preferred choice for various applications, including but not limited to:

  • General-purpose switching and amplification
  • Driver stages in audio amplifiers
  • Signal processing
  • Power management circuits
  • Control systems

Technical Specifications:

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 45 V Collector Current (I<sub>C) 100 mA Power Dissipation (P<sub>D) 250 mW Operating Temperature Range -65°C to +150°C

The 2PB709BRL,215 from NXP Semiconductors is a robust and reliable transistor that provides excellent performance for a multitude of electronic circuits. Its compact size, energy efficiency, and compliance with environmental standards make it an excellent choice for designers and engineers seeking quality and sustainability in their electronic components.

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