The 2PC4081R,135 is a high-quality bipolar junction transistor (BJT) from the renowned semiconductor manufacturer, NXP Semiconductors. This product is a part of NXP's extensive range of discrete semiconductors that are designed to offer superior performance in a variety of electronic applications.

Key Features

• Type: PNP general-purpose transistor
• Package: SOT23 (TO-236AB) - A small and versatile surface-mounted package that is suitable for automated assembly processes.
• Collector-Emitter Voltage (Vceo): 50V - This specifies the maximum voltage that can be applied across the collector-emitter terminals without causing damage.
• Collector Current (Ic): 100mA - The maximum continuous current that can flow through the collector.
• Power Dissipation (Pd): 250mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
• DC Current Gain (hFE): High - This indicates the transistor's ability to amplify the current.
• Transition Frequency (ft): 100MHz - The frequency at which the gain of the transistor falls to 1 when used as an amplifier.
• Low Noise: Ensures a clear signal in sensitive applications.

Applications

The 2PC4081R,135 is ideal for a wide range of applications, including but not limited to:

• General-purpose switching and amplification
• Audio amplifiers and pre-amplifiers
• Signal processing
• Driver stages in hi-fi amplifiers and television circuits
• Portable and consumer electronics

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The 2PC4081R,135 is manufactured in state-of-the-art facilities, ensuring that each transistor meets NXP's rigorous specifications. With its robust construction and proven design, this BJT is an excellent choice for designers looking for a reliable component that will perform consistently across various conditions.