The 2PC4617S,115 is a high-quality bipolar junction transistor (BJT) from NXP Semiconductors, a leading technology company renowned for its innovative and reliable components. This particular transistor is designed for general-purpose switching and amplification applications, offering a blend of performance and efficiency that makes it suitable for a wide range of electronic circuits.

Key Features

• Type: PNP
• Package: TO-236AB (SOT23)
• Collector-Emitter Voltage (Vceo): 50V
• Collector-Base Voltage (Vcbo): 50V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 150mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 100 to 450 at 10mA, 5V
• Transition Frequency (fT): 100MHz
• Operating Temperature: -65°C to +150°C

Applications

The 2PC4617S,115 transistor is versatile and can be used in various applications, including:

• Audio amplifiers and pre-amplifiers
• Signal processing
• Switching circuits
• Linear amplification and switching
• Power management functions
• Consumer electronics
• Telecommunication systems

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products that meet the rigorous demands of the electronics industry. The 2PC4617S,115 is manufactured with precision and subjected to extensive testing to ensure it meets NXP's standards for reliability and performance. With its robust construction and stable operation, this transistor is an excellent choice for designers looking for a dependable component for their electronic designs.

Environmental Compliance

The 2PC4617S,115 complies with various environmental standards, including RoHS (Restriction of Hazardous Substances), ensuring it is suitable for use in environmentally sensitive applications and contributes to the production of greener electronics.