The NXP 82S123B/BEA is a high-performance, bipolar programmable read-only memory (PROM) device designed to deliver reliable and fast read operations in a variety of digital applications. This PROM offers a storage capacity of 32 words with 8 bits per word, making it suitable for storing small amounts of data that need to be accessed quickly and efficiently.

Key Features

• Memory Capacity: 256 bits (32x8)
• Speed: Fast access time, providing high-speed operation for time-critical applications.
• Programming: Fuse-link technology ensures permanent data storage with high programming reliability.
• Package: Housed in a durable, dual-in-line package (DIP) for easy integration into a variety of circuit boards.
• Operating Voltage: Designed to operate at standard TTL levels, with a typical voltage range that ensures compatibility with common digital systems.
• Temperature Range: Capable of operating over a wide temperature range, making it suitable for industrial and automotive applications.

Applications

The versatility of the NXP 82S123B/BEA makes it an excellent choice for a multitude of applications, including:

• Device configuration and hardware settings storage
• Microcontroller-based systems for storing boot code or other critical data
• Industrial control systems requiring quick access to calibration tables or fixed parameters
• Automotive electronics where reliability and durability are paramount
• Custom logic circuits where specific truth tables or control algorithms need to be stored permanently

Quality and Reliability

NXP is known for its commitment to quality and the 82S123B/BEA is no exception. This PROM is manufactured to the highest standards to ensure it meets the rigorous demands of both commercial and industrial environments. Customers can rely on this component for consistent performance and long-term reliability.