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A2I20D020GNR1

Part No A2I20D020GNR1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC AMP W-CDMA 1.4-2.2GHZ TO270WB / RF Amplifier IC W-CDMA 1.4GHz ~ 2.2GHz TO-270WB-17
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category RF and Wireless - RF Amplifiers
Mfr NXP USA Inc.
Series -
Package Tape & Reel
Product Status Active
Frequency 1.4GHz ~ 2.2GHz
P1dB -
Gain 35dB
Noise Figure -
RF Type W-CDMA
Voltage - Supply 28V
Current - Supply -
Test Frequency 2.2GHz
Mounting Type Surface Mount
Package / Case TO-270-17 Variant, Flat Leads
Supplier Device Package TO-270WB-17
Base Product Number A2I20
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 1355281-A2I20D020GNR1
Ultra Librarian 3D Model Ultra Librarian A2I20D020GNR1 CAD Model

Description

Introducing the A2I20D020GNR1 RF Power LDMOS Transistor from NXP

The A2I20D020GNR1 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is specifically engineered to deliver exceptional performance for a wide range of applications, including but not limited to RF energy, industrial, scientific, and medical (ISM) applications.

Key Features and Benefits

  • High Power: With an impressive output power of 20W, the A2I20D020GNR1 is capable of driving high-power applications with ease.
  • High Efficiency: The device boasts high efficiency, which translates into lower energy consumption and reduced heat dissipation, leading to a more reliable and sustainable operation.
  • Broad Frequency Range: It operates over a broad frequency range from 1800 MHz to 2200 MHz, making it versatile for various high-frequency applications.
  • Integrated ESD Protection: Enhanced ESD protection is built into the device to ensure robustness and longevity, safeguarding the transistor against unexpected electrostatic discharges.
  • Thermal Performance: The A2I20D020GNR1 is encapsulated in a plastic over-molded package, which offers excellent thermal performance and reliability.
  • Easy Integration: Designed for easy integration into a wide variety of circuit designs, this LDMOS transistor simplifies the design process for engineers.

Applications

The versatility of the A2I20D020GNR1 allows it to be used in a plethora of applications, including:

  • Commercial and consumer cooking
  • Industrial heating and drying systems
  • Medical applications such as MRI and RF ablation
  • Plasma generation
  • Scientific instrumentation

With its robust design and superior performance, the A2I20D020GNR1 from NXP is an ideal choice for designers looking to enhance their high-power RF applications. Its combination of power, efficiency, and frequency range, along with NXP's proven track record in RF innovation, makes this LDMOS transistor a reliable and cost-effective solution for today's demanding electronic environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.9900 $59.9400
13+ $8.1970 $106.5610
19+ $7.9408 $150.8752
27+ $7.6847 $207.4869
34+ $7.4285 $252.5690
46+ $6.6600 $306.3600
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 570 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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