EN
  • EN
  • DE

A2I25H060GNR1

Part No A2I25H060GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description IC TRANS RF LDMOS / RF Mosfet 28 V 26 mA 2.59GHz 26.1dB 10.5W TO-270WBG-17
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Configuration Dual
Frequency 2.59GHz
Gain 26.1dB
Voltage - Test 28 V
Current - Test 26 mA
Power - Output 10.5W
Voltage - Rated 65 V
Mounting Type Surface Mount
Package / Case TO-270-17 Variant, Gull Wing
Supplier Device Package TO-270WBG-17
Base Product Number A2I25
Standard Package 500 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 858885-A2I25H060GNR1
Ultra Librarian 3D Model Ultra Librarian A2I25H060GNR1 CAD Model

Description

    

Product Overview: A2I25H060GNR1 RF Power Transistor

    

The A2I25H060GNR1 is a state-of-the-art RF power transistor from NXP Semiconductors, designed to deliver exceptional performance for a range of radio frequency applications. This device is part of NXP's highly regarded Airfast RF power solutions, known for their efficiency, reliability, and integration capabilities.

        

Key Features

    
            
  • Frequency Range: The A2I25H060GNR1 operates at a frequency range that is suitable for various RF applications, making it a versatile choice for designers.
  •         
  • Output Power: With a high output power capability, this transistor can handle demanding RF power amplification tasks with ease.
  •         
  • Efficiency: The device is engineered for maximum efficiency, reducing power losses and improving overall system performance.
  •         
  • Thermal Management: Advanced thermal management features ensure the device remains operational even under high-temperature conditions.
  •         
  • Robustness: The A2I25H060GNR1 is designed to be rugged, withstanding harsh operational environments and offering a long service life.
  •     
    

Applications

    

The A2I25H060GNR1 is ideal for a variety of applications, including but not limited to:

    
            
  • Industrial, scientific, and medical (ISM) applications
  •         
  • Broadcast transmitters
  •         
  • RF energy applications
  •         
  • Large-scale wireless infrastructure
  •         
  • Aerospace and defense systems
  •     
    

Product Specifications

    

The A2I25H060GNR1 boasts impressive technical specifications that cater to the needs of high-performance RF systems:

    
            
  • Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)
  •         
  • Package: Designed in a compact and durable package, ensuring ease of integration into various system designs.
  •         
  • Supply Voltage: Optimized for a specific voltage range, providing stable operation and compatibility with standard power supplies.
  •     
    

With its combination of efficiency, power, and robustness, the A2I25H060GNR1 from NXP is an excellent choice for designers looking to enhance their RF power capabilities in a wide range of applications.

You May Also Be Interested in

Texas Instruments
N-CHANNEL NEXFET POWER MOSFET / Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Lowest to $2.8757
NXP / Nexperia
N-channel TrenchMOS transistor
Need more? Email Us
Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
NEC
MOS FIELD EFFECT TRANSISTOR
Need more? Email Us
Analog Devices Inc.
Dual 5 A, 20 V Synchronous Step-Down
Need more? Email Us
Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
ON Semiconductor
Ultrahigh-Speed Switching Applications
Lowest to $0.4123
Panjit
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Lowest to $0.0508
Alpha & Omega Semiconductor Inc.
250V,20A N-Channel MOSFET
Lowest to $0.3708

Top Sellers

Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $11.8797
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $17.6608
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.3800
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.8211
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.3955
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $14.0181
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.2166
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess