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AFT26H250-24SR6

Part No AFT26H250-24SR6
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.5GHZ NI1230S-4 / Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Transistor Type LDMOS
Frequency 2.5GHz
Gain 14.1dB
Voltage - Test 28V
Current - Test 700mA
Power - Output 50W
Voltage Rating DC 65V
Package NI-1230-4LS2L
Manufacturer Package NI-1230-4LS2L
Win Source Part Number 768335-AFT26H250-24SR6
Popularity Medium
Supply and Demand Status Limited
Family Name AFT26H250-24S
Introduction Date October 22, 2013
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian AFT26H250-24SR6 CAD Model

Description

        

The AFT26H250-24SR6 is a state-of-the-art RF power LDMOS transistor that is part of NXP's high-performance product lineup. This advanced semiconductor device is designed to deliver exceptional power and efficiency, making it an ideal choice for a wide range of applications, including RF energy, industrial, scientific, and medical (ISM) applications, as well as for radio and VHF TV broadcast transmitters.

    

Key Features:

    
            
  • Frequency Range: The AFT26H250-24SR6 operates within a frequency range of 2.4 GHz, catering to a broad spectrum of RF applications.
  •         
  • High Output Power: It boasts a high output power of 250 W CW, ensuring robust performance for demanding environments.
  •         
  • High Gain: With a high gain of 14 dB, this LDMOS transistor amplifies RF signals efficiently, resulting in improved signal quality and strength.
  •         
  • Efficiency: The device offers an impressive efficiency of up to 54%, reducing power loss and heat generation, and contributing to the sustainability of systems in which it is deployed.
  •         
  • Integrated ESD Protection: It features integrated ESD protection, safeguarding the device from electrostatic discharge events and enhancing its reliability and longevity.
  •         
  • Thermal Performance: The AFT26H250-24SR6 is encapsulated in a ceramic package that provides excellent thermal performance, ensuring stable operation even under high-temperature conditions.
  •     
    

Applications:

    
            
  • Industrial heating, welding, and drying systems
  •         
  • Medical applications such as MRI and RF ablation
  •         
  • Scientific applications including particle accelerators and plasma generators
  •         
  • Radio and VHF TV broadcast transmitters
  •     
    

The AFT26H250-24SR6 is manufactured by NXP, a trusted leader in the semiconductor industry, known for its commitment to innovation and quality. This LDMOS transistor is a testament to NXP's dedication to providing advanced solutions that meet the evolving needs of modern technology. Whether you are involved in the design and manufacture of commercial RF equipment or high-power industrial systems, the AFT26H250-24SR6 offers the performance and reliability required for cutting-edge applications.

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