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A2T21S260W12NR3

Part No A2T21S260W12NR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description AIRFAST RF POWER LDMOS TRANSISTO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 2.11GHz ~ 2.2GHz
Gain 17.9dB
Voltage - Test 28 V
Current Rating (Amps) 10µA
Current - Test 1.6 A
Power - Output 218W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case OM-880X-2L2L
Supplier Device Package OM-880X-2L2L
Base Product Number A2T21
Standard Package 250 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 858893-A2T21S260W12NR3
Ultra Librarian 3D Model Ultra Librarian A2T21S260W12NR3 CAD Model

Description

The A2T21S260W12NR3 is a cutting-edge RF power transistor designed and manufactured by NXP Semiconductors, a leader in the industry known for their high-performance electronic components. This product is part of NXP's extensive portfolio of radio frequency (RF) power transistors, which are engineered to deliver exceptional performance in a wide range of applications.

Key Features

  • Frequency Range: The A2T21S260W12NR3 operates efficiently over a broad frequency spectrum, making it versatile for various RF applications.
  • Output Power: This device is capable of delivering a high output power of 260 Watts, ensuring robust signal amplification for demanding environments.
  • Efficiency: Designed with energy efficiency in mind, it offers an excellent thermal performance which translates into a lower operational cost and a prolonged lifespan.
  • Gain: It boasts a high gain value, which is a measure of the device's ability to amplify the input signal without significant loss of quality or power.

Applications

The A2T21S260W12NR3 is ideally suited for a variety of applications that require reliable and powerful RF amplification. These include but are not limited to:

  • Broadcast transmitters
  • Cellular base stations
  • Industrial, scientific, and medical (ISM) applications
  • RF energy applications

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The A2T21S260W12NR3 is built with this commitment in mind, ensuring that it performs consistently under various conditions and throughout its intended lifespan. It is designed to withstand rigorous use in commercial and industrial settings, offering peace of mind for designers and engineers who need dependable components.

Environmental Compliance

Understanding the importance of environmental responsibility, the A2T21S260W12NR3 complies with RoHS directives, which means it is free from hazardous substances such as lead, mercury, and cadmium. This compliance not only helps protect the environment but also ensures safety and sustainability in electronic design.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the NXP Semiconductors official website or contact their sales representatives.

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